EL Display Device and Method of Manufacturing the Same

ABSTRACT

To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head portion of a thin film deposition apparatus is scanned along a pixel row to thereby simultaneously apply a red light emitting layer application liquid, a green light emitting layer application liquid, and a blue light emitting layer application liquid in stripe shapes. Heat treatment is then performed to thereby form light emitting layers luminescing each of the colors red, green, and blue.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an EL display device comprising an ELelement, which is constructed of a light emitting organic materialcapable of obtaining EL (Electro Luminescence)(hereinafter referred toas organic EL material) sandwiched between an anode and a cathode, thatis formed on a substrate, and to a method of manufacturing an electronicdevice (electronic equipment) having the El display device as a displayportion (a display or a display monitor). It is to be noted that theabove-mentioned EL display device is also referred to as OLED (OrganicLight Emitting Diodes).

2. Description of the Related Art

In recent years, the development of a display device (EL display device)employing an EL element as a self-emissive element that utilizes the ELphenomenon of a light emitting organic material is proceeding. Since theEL display device is a self-emissive type, it does not need a backlightsuch as the liquid crystal display device. Furthermore, because theviewing angle of EL display devices is wider, it is perceived as aprospective display portion of mobile equipment for use outdoors.

There are two types of EL display devices, the passive type (simplematrix type) and the active type (active matrix type). Developments forboth types of EL display devices are being actively carried out. Inparticular, the active matrix EL display device is currently attractingmuch attention. Researches are being made on low molecular organic ELmaterials and high molecular organic EL materials (organic polymer ELmaterials) as to organic EL materials for forming a light emitting layerwhich can be regarded as the core of the EL element. High molecularorganic EL materials are receiving much attention because they areeasier to deal with than low molecular organic EL materials and havehigh heat resistant characteristics.

As a film deposition method of high molecular organic EL materials, theink-jet method proposed by Seiko Epson, Co. Ltd. is considered afavorable method. Japanese Patent Application Laid-open No. Hei10-12377, Japanese Patent Application Laid-open No. Hei 10-153967, andJapanese Patent Application Laid-open No. Hei 11-54270 etc. may bereferred to regarding this technique.

However, in the inkjet method, the high molecular organic EL material issprayed on the application surface. Hence, if the distance between theapplication surface and the nozzle of the ink-jet head is not setappropriately, drops of solution will be shot to parts that theapplication is not necessary, resulting in the occurrence of a problemwhat is known as an aviation curve. Note that details regarding theaviation curve are disclosed in the above-mentioned Japanese PatentApplication Laid-open No. Hei 11-54270, in which 50 μm or more of slipoccurs from the positional target of shot.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above problem, and anobject thereof is to provide a high throughput film deposition means forfilm depositing an organic EL material made of polymer accurately andwithout any positional shift. Another object of the present invention isto provide an EL display device employing such means and a method ofmanufacturing the same. Still further, another object of the presentinvention is to provide electronic equipment having such EL displaydevices as its display portion.

In order to achieve the above objects, the present invention ischaracterized in that red, green, and blue light emitting layers areformed into stripe shapes by using a dispenser-like thin film depositionapparatus. It is to be noted that stripe shapes include a long andnarrow rectangle having an aspect ratio of 2 or greater, and a long andnarrow ellipse having the ratio of its major axis and minor axis equalto 2 or greater. The thin film deposition apparatus of the presentinvention is shown in FIG. 1.

FIG. 1A is a diagram schematically showing the state of the filmdeposition of an organic EL material made of π conjugate-based polymerwhen the present invention is implemented. In FIG. 1A, a pixel portion111, a source side driver circuit 112, and a gate side driver circuit113, all formed of TFTs, are formed on a substrate 110. A regionsurrounded by a plurality of source wirings connected to the source sidedriver circuit 112 and a plurality of gate wirings connected to the gateside driver circuit 113 is a pixel. A TFT and an EL element electricallyconnected to the TFT are formed in the pixel. Thus, the pixel portion111 is formed of such pixels arranged in matrix.

Here, reference numeral 114 a denotes a mixture of an organic ELmaterial luminescing red and a solvent (hereinafter referred to as a redlight emitting layer application liquid); 114 b denotes a mixture of anorganic EL material luminescing green and a solvent (hereinafterreferred to as a green light emitting layer application liquid); and 114c denotes a mixture of an organic EL material luminescing blue and asolvent (hereinafter referred to as a blue light emitting layerapplication liquid). Note that a polymer is the organic EL material forthese application liquids, and that there is a method of directlydissolving a polymerized material into the solvent for application, or amethod of performing thermal polymerization to a material, which isformed by dissolving monomer in a solvent and then by performing filmdeposition, to form a polymer. Whichever method may be used in thepresent invention. An example of applying an organic EL materialprocessed into a polymer and dissolved in a solvent is shown here.

In the case of the present invention, the red light emitting layerapplication liquid 114 a, the green light emitting layer applicationliquid 114 b, and the blue light emitting layer application liquid 114 care separately discharged from the thin film deposition apparatus andapplied in the direction indicated by the arrow. In other words, in apixel row that will luminesce red, a pixel row that will luminescegreen, and a pixel row that will luminesce blue, stripe shape lightemitting layers (strictly a precursor of a light emitting layer) aresimultaneously formed.

Note that the pixel row referred here indicates a row of pixelpartitioned by a bank 121 that is formed on the upper part of the sourcewiring. That is, a row composed of a plurality of pixels lined up inseries along the source wiring is called a pixel row. A case where thebank 121 is formed on the upper part of the source wiring was explainedhere, but it may also be provided on the upper part of the gate wiring.In this case, a row composed of a plurality of pixels lined up in seriesalong the gate wiring is called a pixel row.

Accordingly, the pixel portion 111 can be viewed as an assembly of aplurality of pixel rows divided by the stripe shape bank provided on theupper part of the plurality of source wirings or gate wirings. When thepixel portion is viewed as such, it can also be said that the pixelportion 111 is made up of a pixel row in which a stripe shape lightemitting layer luminescing red is formed, a pixel row in which a stripeshape light emitting layer luminescing green is formed, and a pixel rowin which a stripe shape light emitting layer luminescing blue is formed.

Further, since the above-stated stripe shape bank is provided on theupper part of the plurality of source wirings or plurality of gatewirings, substantially, the pixel portion 111 can also be viewed as anassembly of a plurality of pixel rows partitioned by the source wiringsor the gate wirings.

Next, shown in FIG. 1B is the state of a head portion (may also bereferred as a discharge portion) of the thin film deposition apparatuswhen the application process illustrated in FIG. 1A is performed.

Reference numeral 115 denotes a head portion of the thin film depositionapparatus with a nozzle 116 a for the red color, a nozzle 116 b for thegreen color, and a nozzle 116 c for the blue color attached thereto.Furthermore, the red light emitting layer application liquid 114 a, thegreen light emitting layer application liquid 114 b, and the blue lightemitting layer application liquid 114 c are stored inside the respectivenozzles. A pipe 117 filled up with inert gas is pressurized to therebydischarge these application liquids to the pixel portion 111. The headportion 115 is scanned in a perpendicular direction along a definedspace toward the front of the drawing thereby performing the applicationprocess illustrated in FIG. 1A.

Note that the head portion is stated as being scanned throughout thepresent specification. In practice, the substrate is moved in a verticalor horizontal direction by the X-Y stage. Thus, the head portion isrelatively scanned in a vertical or horizontal direction on thesubstrate. Of course, the substrate can be fixed so that the headportion itself conducts the scanning. From the viewpoint of stability,however, a method of moving the substrate is preferred.

FIG. 1C is a diagram showing an enlarged view of the vicinity of thedischarge portion denoted by the reference numeral 118. The pixelportion 111 formed on the substrate 110 is an assembly of a plurality ofpixels composed of a plurality of TFTs 119 a to 119 c and a plurality ofpixel electrodes 120 a to 120 c. In FIG. 1B, when the nozzles 116 a to116 c are pressurized by inert gas, application liquids 114 a to 114 cwill be discharged from the nozzles 116 a to 116 c due to this pressure.

Note that the bank 121 formed of a resin material is provided in thespace between pixels to prevent the application liquid from mixing intoa space between pixels. In this structure, the width of the bank 121(determined by the resolution of photolithography) is made narrow sothat the integration degree of the pixel portion is increased, andtherefore, high definition images can be attained. In particular, it iseffective in the case in which the viscosity of the application liquidsis 1 to 30 cp.

However, if the viscosity of the application liquid is 30 cp or more, orif the application liquid is in the form of sol or gel, then it ispossible to omit the bank from the structure. In other words, as long asthe angle of contact between the application liquid after it has beenapplied and the application surface is large enough, the applicationliquid will not spread out more than necessary. Therefore, the provisionof the bank for preventing the application liquid from spreading outmore than necessary is not required. In this case, the final shape ofthe light emitting layers will be formed into an oval shape (a long andnarrow ellipse wherein the ratio of the major axis and the minor axis is2 or greater), typically a long and narrow ellipse extending from oneend of the pixel portion to the other end thereof.

As resin materials for forming the bank 121, acrylic, polyimide,polyamide, and polyime amide can be used. If carbon or black pigment orthe like is provided in these resin materials in advance to make theresin materials black, then it is possible to use the bank 121 as alight shielding film between pixels.

In addition, by attaching a sensor that employs a light reflector nearthe tip of any one of the nozzles 116 a, 116 b, and 116 c, the distancebetween the application surface and the nozzles may be regulated so asto maintain a fixed distance at all times. Furthermore, provision of amechanism for regulating the gap among the nozzles 116 a to 116 c incorrespondence with the pixel pitch (distance between pixels) allows thenozzles to be applied to EL display devices having any pixel pitch.

Thus, the application liquids 114 a to 114 c discharged from the nozzles116 a to 116 c are applied so as to cover the respective pixelelectrodes 120 a to 120 c. After applying the application liquids 114 ato 114 c, heat treatment (bake treatment or burning treatment) iscarried out in vacuum to volatilize the organic solvent contained in theapplication liquids 114 a to 114 c, thereby forming the light emittinglayers made of an organic EL material. Therefore, an organic solventthat will volatilize under a temperature lower than the glass transitiontemperature (Tg) of the organic EL material is used. Further, the filmthickness of the light emitting layers that are finally formed isdetermined by the viscosity of the organic EL material. In this case,although the viscosity may be regulated by the choice of the organicsolvent or a dopant, it is preferable that the viscosity is between 1and 50 cp (preferably between 5 and 20 cp).

If there are many impurities likely to become crystal nuclei in theorganic EL material, the possibility of crystallizing the organic ELmaterial becomes high when the organic solvent is volatilized. When theorganic EL material is crystallized, the efficiency of light emissiondrops, and therefore is unfavorable. It is desirable that as much aspossible, impurities are not contained in the organic EL material.

To reduce the impurities, the solvent and the organic EL material areintensively refined, and it is important to keep the environment asclean as possible when mixing the solvent and the organic EL material.For the refinement of the solvent or the organic EL material, it ispreferable that techniques such as evaporation, sublimation, filtration,recrystallization, re-sedimentation, chromatography, or dialyzation beperformed repetitiously. It is desirable to ultimately reduce impuritiessuch as a metal element and an alkaline metal element to 0.1 ppm or less(preferably 0.01 ppm or less)

In addition, it is preferable that sufficient attention is paid to theatmosphere in applying the application liquid containing an organic ELmaterial formed by the thin film deposition apparatus illustrated inFIG. 1. To be more specific, it is desirable that the film deposition ofthe above-mentioned organic EL material is performed in a clean boothfilled with inert gas such as nitrogen and inside a glove box.

Accordingly, with the employment of the thin film deposition apparatus,the three types of light emitting layers luminescing red, green, andblue can be formed at the same time. Consequently, light-emitting layersmade of a high molecular organic EL material can be formed at a highthroughput. In addition, different from the ink-jet method, the methodof the present invention is capable of applying the application liquidsin stripe shape to a pixel row without any intervals, resulting in anextremely high throughput.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1C are diagrams showing an application process of an organicEL material of the present invention;

FIG. 2 is a diagram showing the cross-sectional structure of a pixelportion;

FIGS. 3A and 3B are diagrams showing the top structure and theconfiguration, respectively, of the pixel portion;

FIGS. 4A to 4E are diagrams showing manufacturing processes of an ELdisplay device;

FIGS. 5A to 5D are diagrams showing manufacturing processes of an ELdisplay device;

FIGS. 6A to 6C are diagrams showing manufacturing processes of an ELdisplay device;

FIG. 7 is a diagram showing an external view of an EL display device;

FIG. 8 is a diagram showing the circuit block structure of an EL displaydevice;

FIG. 9 is an enlarged diagram of the pixel portion;

FIG. 10 is a diagram showing the element structure of a sampling circuitof an EL display device;

FIGS. 11A and 11B are diagrams showing the top structure and thecross-sectional structure, respectively, of an active matrix EL displaydevice;

FIGS. 12A and 12B are a diagram showing an application process of anorganic EL material of the present invention and an enlarged diagram ofthe pixel portion, respectively;

FIG. 13 is a diagram showing the cross-sectional structure of a passivetype EL display device;

FIGS. 14A and 14B are enlarged diagrams of the pixel portion;

FIG. 15 is a diagram showing a cross-sectional structure of a passivetype EL display device;

FIG. 16 is a diagram showing an application process of an organic ELmaterial of the present invention;

FIGS. 17A to 17C are diagrams showing the arrangement of nozzles in thehead portion;

FIGS. 18A to 18F are diagrams showing specific examples of electronicequipment:

FIGS. 19A and 19B are diagrams showing specific examples of electronicequipment:

FIG. 20 is a diagram showing a cross-sectional structure of an activematrix EL display device;

FIGS. 21A and 21B are diagrams showing a bonding process of a substrate;

FIGS. 22A and 22B are diagrams showing a dividing process of asubstrate;

FIG. 23 is a diagram showing a cross-sectional structure of an activematrix EL display device;

FIGS. 24A to 24C are diagrams showing compositions of a pixel of an ELdisplay device; and

FIGS. 25A and 25B are diagrams showing a structure of a current controlTFT and a composition of a pixel, respectively.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment Mode

Some embodiments of the present invention will be described withreference to FIGS. 2, 3A and 3B. FIG. 2 shows a cross-sectional view ofa pixel portion in an EL display device in accordance with the presentinvention. FIG. 3A shows a top view of the pixel portion, and FIG. 3Bshows the circuit configuration thereof. In an actual structure, pixelsare arranged in a plurality of lines to be in matrix, thereby forming apixel portion (image display portion). FIG. 2 illustrates across-sectional view taken along the line A-A′ in FIG. 3A. Accordingly,the same components are commonly designated by the same referencenumerals in both of the figures, and it will be advantageous forunderstanding the structure to make reference to both of the figures. Inaddition, the two pixels illustrated in the top view of FIG. 3A have thesame structure.

In FIG. 2, reference numeral 11 denotes a substrate, and 12 denotes abase insulating film (hereinafter referred to as the base film). As thesubstrate 11, a glass substrate, a glass ceramic substrate, a quartzsubstrate, a silicon substrate, a ceramic substrate, a metal substrate,or a plastic substrate (including a plastic film) can be used.

In addition, the base film 12 is especially advantageous for a substrateincluding mobile ions or a substrate having conductivity, but does notnecessarily have to be provided for a quartz substrate. As the base film12, an insulating film containing silicon may be used. In the presentspecification, the “insulating film containing silicon” refers to aninsulating film containing silicon and oxygen or nitrogen at apredetermined ratio, and more specifically, a silicon oxide film, asilicon nitride film, or a silicon oxide nitride film (represented asSiOxNy.)

It is advantageous to provide the base film 12 with a heat radiationfunction to dissipate heat generated in a TFT in order to prevent a TFTor an EL element from deteriorating. The heat radiation function can beprovided by any known material.

In this example, two TFTs are provided in one pixel. A TFT 201 functionsas a switching element (hereinafter referred to as the switching TFT),and a TFT 202 functions as a current controlling element for controllingan amount of current to flow through the EL element (hereinafterreferred to as the current control TFT.) Both of the TFTs 201 and 202are made of the n-channel TFT.

Since the n-channel TFT has a field effect mobility higher than that ofthe p-channel TFT, the n-channel TFT can operate at higher speed andaccept a large amount of current. Furthermore, a current of the sameamount can flow through the n-channel TFT of smaller size as compared tothe p-channel TFT. Accordingly, it is preferable to use the n-channelTFT as the current control TFT since this results in an increasedeffective luminescence surface area of the display portion.

The p-channel TFT has advantages, e.g., in which the injection of hotcarriers becomes hardly a problem and an OFF current value is small.Thus, it has been already reported the structures in which the p-channelTFT is used as the switching TFT or the current control TFT. However, inthe present invention, the disadvantages in connection with theinjection of hot carriers and a small OFF current value can be overcomeeven in the n-channel TFT by providing the arrangement of LDD regions.Thus, it is also possible that all of the TFTs in the pixel are made ofthe n-channel TFTs.

However, the present invention is not limited to the case where theswitching TFT and the current control TFT are made of the n-channelTFTs. It is possible to use the p-channel TFT as both or either of theswitching TFT and the current control TFT.

The switching TFT 201 is formed to have a source region 13, a drainregion 14, an active layer including LDD regions 15 a to 15 d, a highconcentration impurity region 16 and channel forming regions 17 a and 17b, a gate insulating film 18, gate electrodes 19 a and 19 b, a firstinterlayer insulating film 20, a source wiring 21, and a drain wiring22.

In addition, as shown in FIGS. 3A and 3B, the gate electrodes 19 a and19 b are electrically connected to each other by means of a gate wiring211 which is made of a different material (that has a lower resistivitythan the gate electrodes 19 a and 19 b), thereby forming a double-gatestructure. It is of course possible to employ, not only the double-gatestructure, but also the so-called multi-gate structure (a structureincluding an active layer, which contains two or more channel formingregions, connected in series) such as a triple-gate structure.

The multi-gate structure is significantly advantageous for decreasingOFF current value. In accordance with the present invention, a switchingelement having a low OFF current value can be realized by providing theswitching element 201 in the pixel with the multi-gate structure.

In addition, the active layer is formed of a semiconductor film thatincludes a crystalline structure. This may be a single crystallinesemiconductor film, a polycrystalline semiconductor film, or amicrocrystalline semiconductor film. The gate insulating film 18 may beformed of an insulating film containing silicon. Furthermore, any kindof conductive films can be used as the gate electrode, the sourcewiring, or the drain wiring.

Furthermore, in the switching TFT 201, the LDD regions 15 a to 15 d aredisposed so as not overlap the gate electrodes 19 a and 19 b. Such astructure is significantly advantageous for reducing an OFF currentvalue.

For reducing the OFF current value, it is further preferable to providean offset region (which is made of a semiconductor layer having the samecomposition as the channel forming regions and that a gate voltage isnot applied thereto) between the channel forming regions and the LDDregions. In addition, in the case of the multi-gate structure having twoor more gate electrodes, the high concentration impurity region disposedbetween the channel forming regions is effective for reducing the OFFcurrent value.

As mentioned above, the OFF current value can be sufficiently lowered ifthe multi-gate structure TFT is used as the switching TFT 201 of thepixel. In other words, a low OFF current value means that the voltageapplied to the gate of the current control TFT can be maintained longer.Therefore, a capacitor for holding an electric potential, such as theone of FIG. 2 disclosed in Japanese Patent Application Laid-open No. Hei10-189252, can be made smaller, and even if omitted, an advantage ofcapable of maintaining the gate voltage of the current control TFT untilthe next writing period can be attained.

Then, the current control TFT 202 is formed to have a source region 31,a drain region 32, an active layer including an LDD region 33 and achannel forming region 34, a gate insulating film 18, a gate electrode35, a first interlayer insulating film 20, a source wiring 36, and adrain wiring 37. Although the illustrated gate electrode 35 has thesingle-gate structure, it may have the multi-gate structure.

As shown in FIG. 2, a drain of the switching TFT 201 is connected to agate of the current control TFT 202. More specifically, the gateelectrode 35 of the current control TFT 202 is electrically connected tothe drain region 14 of the switching TFT 201 through the drain wiring22. Furthermore, the source wiring 36 is connected to a power supplyline 212 (see FIG. 3A).

The current control TFT 202 is a device intended to control an amount ofcurrent to be injected into the EL element 203. However, consideringpossible deterioration of the EL element, it is not preferable to allowa large amount of current to flow. Accordingly, in order to preventexcessive current from flowing through the current control TFT 202, thechannel length (L) thereof is preferably designed to be long. Desirably,the channel length (L) is designed to be 0.5 to 2 μm (preferably, 1 to1.5 μm) long per pixel.

In view of the above-mentioned description, as shown in FIG. 9, thechannel length L1 (where L1=L1 a+L1 b) and the channel width W1 of theswitching TFT, and the channel length L2 and the channel width W2 of thecurrent control TFT are preferably set as follows: W1 is in the rangefrom 0.1 to 5 μm (typically, 0.5 to 2 μm); W2 is in the range from 0.5to 10 μm (typically, 2 to 5 elm); L1 is in the range from 0.2 to 18 μm(typically, 2 to 15 μm); and L2 is in the range from 1 to 50 μm(typically, 10 to 30 μm). However, the present invention is not limitedto the above-mentioned values.

The length (width) of the LDD regions to be formed in the switching TFT201 is set in the range from 0.5 to 3.5 μm, typically in the range from2.0 to 2.5 μm.

The EL display device as shown in FIG. 2 has features in which the LDDregion 33 is provided between the drain region 32 and the channelforming region 34 in the current control TFT 202, and part of the LDDregion 33 overlaps the gate electrode 35 through the gate insulatingfilm 18.

In order for the current control TFT 202 to supply a current for makingthe EL element 204 luminesce, it is preferable that steps are takenagainst deterioration due to hot carrier injection as shown in FIG. 2.

Note that in order to suppress the value of the off current, it iseffective to form the LDD region so that it overlaps a portion of thegate electrode. In this case, the region that overlaps the gateelectrode suppresses hot carrier injection, and the region that does notoverlap the gate electrode prevents OFF current value.

The length of the LDD region, which overlaps the gate electrode, may bemade from 0.1 to 3 μm (preferably between 0.3 and 1.5 μn) at this point.Further, in the case of providing an LDD region that does not overlapthe gate electrode, the length of the LDD region may be made from 1.0 to3.5 μm (preferably between 1.5 and 2.0 μm).

It is also possible to use a parasitic capacitance (also referred to asa gate capacitance), which is formed in the region between the gateelectrode and the LDD region that overlaps the gate electrode via thegate insulating film, as a capacitor for actively maintaining electricpotential (maintaining an electric charge). In the present embodiment,the LDD region 33 shown in FIG. 2 is formed to thereby form a gatecapacitance between the gate electrode 35 and the LDD region 33. Thisgate capacitance is used as a capacitor for maintaining electricpotential, such as the one shown in FIG. 2, disclosed in Japanese PatentApplication Laid-open No. Hei 10-189252.

Of course, it does not matter if a special capacitor is formed. However,by forming the capacitor with a structure such as the presentembodiment, it is possible to form the capacitor for maintainingelectric potential on an extremely small area, and it becomes possibleto increase the effective luminescence surface area of the pixel(surface area that can extract light emitted from the EL element).

The carrier (electrons in this case) flow direction is always the samefor the current control TFT 202, and therefore it is sufficient to formthe LDD region on only the drain region side as measures against hotcarriers.

From the view point of increasing a possible amount of current to flow,it is also effective to increase film thickness of the active layer (inparticular, a thickness at the channel forming region) of the currentcontrol TFT 202 (preferably in the range from 50 to 100 nm, and morepreferably in the range from 60 to 80 nm). On the other hand, in thecase of the switching TFT 201, from the view point of reducing an OFFcurrent value, it is also effective to decrease film thickness of theactive layer (in particular, a thickness at the channel forming region)of the current control TFT 202 (preferably in the range from 20 to 50nm, and more preferably in the range from 25 to 40 nm.)

Further, in the present embodiment, the current control TFT 202 is shownas a single-gate structure. However, it may also be a multi-gatestructure composed of a plurality of TFTs connected in series.Furthermore, the current control TFT may also be a structure in whichthe plurality of TFTs is connected in rows (parallel) to substantiallydivide the channel forming region into a plural number of regions,thereby performing highly effective heat radiation. Such structure iseffective as a measure against deterioration due to heat.

Next, reference numeral 38 denotes a first passivation film, and itsfilm thickness may be formed to between 10 nm to 1 μm (preferablybetween 200 and 500 nm). An insulating film containing silicon(particularly a silicon oxide nitride film or a silicon nitride film ispreferred) can be employed as a material for this film. Furthermore, itis effective to form the first passivation film 38 to have a highthermal radiation effect.

A second interlayer insulating film 39 (a leveling film) formed on thefirst passivation film 38 performs the leveling of a stepped portionthat are formed by the TFT. An organic resin film is preferable as thesecond interlayer insulating film 39, and one such as polyimide,polyamide, acrylic, or BCB (benzocyclobutane) may be used. An inorganicfilm may, of course, also be used, provided that sufficient leveling ispossible.

The leveling of a stepped portion in the TFT by the second interlayerinsulating film 39 is extremely important. The EL layer formed afterwardis very thin, and therefore there are cases in which poor luminescenceis caused by the existence of a stepped portion. It is thereforepreferable to perform leveling before forming a pixel electrode so as tobe able to form the EL layer on as level a surface as possible.

Reference numeral 40 denotes a pixel electrode (EL element cathode) madefrom a highly reflective conductive film. After opening a contact hole(an opening) in the second interlayer insulating film 39 and in thefirst passivation film 38, the pixel electrode 40 is formed so as to beconnected to the drain wiring 37 of the current control TFT 202 in theformed opening portion. It is preferable to use low resistant conductivefilms such as aluminum alloy and copper alloy as the pixel electrode 40.Of course, it may also be a laminate structure with other conductivefilms.

A light emitting layer 42 is formed by a device such as the thin filmdeposition apparatus explained in FIG. 1. It is to be noted thatalthough only one pixel is illustrated in the drawing, light emittinglayers corresponding to the respective colors R (red), G (green), and B(blue) are simultaneously formed. A high molecular material is used forthe organic EL material as the light-emitting layer. Polymers such asthe following can be given as typical high molecular materials:polyparaphenylene vinylene (PPV)-based material; polyvinyl carbazole(PVK)-based one; and polyfluorenes-based one.

Note that there are various types of PPV-based organic EL material. Amolecular formula such as the following has been reported.

(H. Shenk, H. Becker, O. Gelsen, E. Kluge, W. Kreuder and H. Spreitzer,“Polymers for Light Emitting Diodes”, Euro Display, Proceedings, 1999,pp. 33-37)

Further, the molecular formula of polyphenylene vinylene disclosed inJapanese Patent Application Laid-open No. 10-92576 can be used. Themolecular formula becomes as follows:

Further, as a molecular formula of a PVK-based organic EL material,there is one such as the following.

The application of the high molecular organic EL material can beperformed by dissolving the high molecular organic EL material in asolvent when it is in a polymer state, or dissolving the high molecularorganic EL material in a solvent when it is in a monomer state and thenperforming polymerization. In the case of applying it in the monomerstate, first, a polymer precursor is formed and then heat treatment isperformed in vacuum to thereby polymerize it into a polymer.

As a concrete light emitting layer, a cyano-paraphenylene vinylene maybe used for the light emitting layer luminescing a red color; aparaphenylene vinylene for the light emitting layer luminescing a greencolor; and a polyphenylene vinylene or a polyalkylphenylene for thelight emitting layer luminescing a blue color. The film thickness of thelight emitting layers may be formed to between 30 and 150 nm (preferablybetween 40 and 100 nm).

Further, a fluorescent substance (typically coumarin 6, rublene, NileRed, DCM, quinacridon, etc.) is doped into the light emitting layer totransfer the fluorescent substance to the center of luminescence, andtherefore, a desired luminescence may be obtained. Any known fluorescentsubstance may be used.

However, the above examples are only some examples of organic ELmaterials which can be used as the light emitting layer of the presentinvention, and there is absolutely no need to limit the EL material tothese. In the present invention, a mixture of an organic EL material anda solvent is applied by using the method illustrated in FIG. 1. Thesolvent is then volatilized, thereby removing the solvent to form alight-emitting layer. Therefore, during the volatilization of thesolvent, the combinations of any type of organic EL materials that donot exceed the glass transition temperature of the light emitting layermay be used.

Chloroform; dichloromethane, γ butyl lactone, butyl cellosolve, or NMP(N-methyl-2-pyrrolidone) are cited as typical solvents. It is alsoeffective to add a dopant for raising the viscosity of the applicationliquid.

Furthermore, when forming the light-emitting layer 42, the treatmentatmosphere is a dry atmosphere with as small amount of moisture aspossible, desirably, carrying out the formation in an inert gasatmosphere. Degradation of the EL layer is easily caused by the presenceof moisture and oxygen. Therefore, when forming the EL layer, it isnecessary to eliminate these factors as much as possible. For instance,preferably in atmospheres such as a dry nitrogen atmosphere and a dryargon atmosphere. In order to do this, the thin film depositionapparatus of FIG. 1 is installed in a clean booth that is filled withinert gas. It is desirable that the film deposition process of the lightemitting layer be carried out in this atmosphere.

If the light emitting layer 42 is formed in the above-mentioned manner,a hole injection layer 43 will be formed next. The present embodimentmode uses polythiophene (PEDOT) or polyaniline (PAni) as the holeinjection layer 43. Since these materials are water-soluble, the lightemitting layer 42 can be formed without dissolving, and its filmthickness may be 5 to 30 nm (preferably 10 to 20 nm)

An anode 44 made from a transparent conductive film is provided on thehole injection layer 43. In the case of the present embodiment mode,light produced by the light emitting layer 42 is emitted towards theupper side surface (in a direction towards the top of the TFT). Thus,the anode must have light transmitting characteristics. A compound ofindium oxide and tin oxide and a compound of indium oxide and zinc oxidecan be used as the transparent conductive film. However, because thetransparent conductive film is formed after the formation of the lightemitting layer and the hole injection layer, which are low in heatresistance, materials which can be formed into films at as low atemperature as possible are preferable.

The EL element 203 is completed at the point the anode 44 is formed.Note that the EL element 203 referred to here designates a capacitorformed of the pixel electrode (cathode) 40, the hole injection layer 43,the light emitting layer 42, and the anode 44. As shown in FIG. 3, sincethe pixel electrode 40 almost coincides with the surface area of thepixel, the entire pixel functions as the EL element. Accordingly, theutility efficiency of luminescence is extremely high, making it possibleto display brighter images.

Further, in the present embodiment mode, the pixel electrode 40 isformed so that its structure is that of a cathode. Therefore, lightsgenerated by the light emitting layer are all emitted to the anode side.However, contrary to the structure of this EL element, it is alsopossible to form the pixel electrode so that its structure is that of ananode made of a transparent conductive film. In this case, since lightsgenerated by the light emitting layer are also emitted to the anodeside, light is observed from the substrate 11 side.

In the present embodiment mode, a second passivation film 45 is furtherprovided on the anode 44. As the second passivation film 45, a siliconnitride film or a silicon oxide nitride film is preferable. The purposeof this is to shield the EL element from the outside, and has twomeanings of which one is to prevent the organic EL material fromdeterioration due to oxidation, and the other is to suppress the leakageof gas from the organic EL material. Hence, the reliability of the ELdisplay device can be increased.

The EL display device of the present invention has a pixel portioncontaining a pixel with a structure as shown in FIG. 2, and TFTs havingdifferent structures in response to their functions are arranged in thepixel. A switching TFT having a sufficiently low OFF current value, anda current control TFT which is strong with respect to hot carrierinjection can be formed within the same pixel, and an EL display devicehaving high reliability and which is capable of good image display (highoperating performance) can thus be formed.

It is to be noted that although the structure of a planar TFT was shownin the present embodiment mode as an example using a top gate TFT, abottom gate TFT (typically a reverse stagger TFT) may also be used. Thepresent invention is characterized by the film deposition method of theorganic EL element, and the structure of the TFT to be arranged in thepixel is not limited.

Embodiment 1

The embodiments of the present invention are explained using FIGS. 4A to6C. A method of simultaneous manufacture of a pixel portion, and TFTs ofa driver circuit portion formed in the periphery of the pixel portion,is explained here. Note that in order to simplify the explanation, aCMOS circuit is shown as a basic circuit for the driver circuits.

First, as shown in FIG. 4A, a base film 301 is formed to a thickness of300 nm on a glass substrate 300. Silicon oxide nitride films arelaminated as the base film 301 in Embodiment 1. At this point, it isappropriate to set the nitrogen concentration to between 10 and 25 wt %in the film contacting the glass substrate 300. In addition, it iseffective that the base film 301 has a thermal radiation effect, and aDLC (diamond-like carbon) film may also be provided.

Next, an amorphous silicon film (not shown in the figures) is formedwith a thickness of 50 nm on the base film 301 by a known depositionmethod. Note that it is not necessary to limit this to the amorphoussilicon film, and another film may be formed provided that it is asemiconductor film containing an amorphous structure (including amicrocrystalline semiconductor film). In addition, a compoundsemiconductor film containing an amorphous structure, such as anamorphous silicon germanium film, may also be used. Further, the filmthickness may be made from 20 to 100 nm.

The amorphous silicon film is then crystallized by a known technique,forming a crystalline silicon film (also referred to as apolycrystalline silicon film or a polysilicon film) 302. Thermalcrystallization using an electric furnace, laser annealingcrystallization using a laser light, and lamp annealing crystallizationusing an infrared lamp exist as known crystallization methods.Crystallization is performed in Embodiment 1 using an excimer laserlight, which uses XeCl gas.

Note that pulse emission excimer laser light formed into a linear shapeis used in Embodiment 1, but a rectangular shape may also be used, andcontinuous emission argon laser light and continuous emission excimerlaser light can also be used.

In this embodiment, although the crystalline silicon film is used as theactive layer of the TFT, it is also possible to use an amorphous siliconfilm.

Note that it is effective to form the active layer of the switching TFT,in which there is a necessity to reduce the off current, by theamorphous silicon film, and to form the active layer of the currentcontrol TFT by the crystalline silicon film. Electric current flows withdifficulty in the amorphous silicon film because the carrier mobility islow, and the off current does not easily flow. In other words, the mostcan be made of the advantages of both the amorphous silicon film,through which current does not flow easily, and the crystalline siliconfilm, through which current easily flows.

Next, as shown in FIG. 4B, a protective film 303 is formed on thecrystalline silicon film 302 with a silicon oxide film having athickness of 130 nm. This thickness may be chosen within the range of100 to 200 nm (preferably between 130 and 170 nm). Furthermore, otherfilms may also be used providing that they are insulating filmscontaining silicon. The protective film 303 is formed so that thecrystalline silicon film is not directly exposed to plasma duringaddition of an impurity, and so that it is possible to have delicateconcentration control of the impurity.

Resist masks 304 a and 304 b are then formed on the protective film 303,and an impurity element, which imparts n-type conductivity (hereafterreferred to as an n-type impurity element), is added. Note that elementsresiding in periodic table group 15 are generally used as the n-typeimpurity element, and typically phosphorous or arsenic can be used. Notethat a plasma doping method is used, in which phosphine (PH₃) is plasmaactivated without separation of mass, and phosphorous is added at aconcentration of 1×10¹⁸ atoms/cm³ in Embodiment 1. An ion implantationmethod, in which separation of mass is performed, may also be used, ofcourse.

The dose amount is regulated so that the n-type impurity element iscontained in n-type impurity regions 305 and 306, thus formed by thisprocess, at a concentration of 2×10¹⁶ to 5×10¹⁹ atoms/cm³ (typicallybetween 5×10¹⁷ and 5×10¹⁸ atoms/cm³).

Next, as shown in FIG. 4C; the protective film 303 is removed, and anactivation of the added n-type impurity elements is performed. A knowntechnique of activation may be used as the means of activation, butactivation is done in Embodiment 1 by irradiation of excimer laserlight. Of course, a pulse emission excimer laser and a continuousemission excimer laser may both, be used, and it is not necessary toplace any limits on the use of excimer laser light. The goal is theactivation of the added impurity element, and it is preferable thatirradiation is performed at an energy level at which the crystallinesilicon film does not melt. Note that the laser irradiation may also beperformed with the protective film 303 in place.

The activation by heat treatment (furnace annealing) may also beperformed along with activation of the impurity element by laser light.When activation is performed by heat treatment, considering the heatresistance of the substrate, it is good to perform heat treatment on theorder of 450 to 550° C.

A boundary portion (connecting portion) with end portions of the n-typeimpurity regions 305 and 306, namely regions, in which the n-typeimpurity element is not added, on the periphery of the n-type impurityregions 305 and 306, is delineated by this process. This means that, atthe point when the TFTs are later completed, extremely good connectingportion can be formed between LDD regions and channel forming regions.

Unnecessary portions of the crystalline silicon film are removed next,as shown in FIG. 4D, and island shape semiconductor films (hereafterreferred to as active layers) 307 to 310 are formed.

Then, as shown in FIG. 4E, a gate insulating film 311 is formed,covering the active layers 307 to 310. An insulating film containingsilicon and with a thickness of 10 to 200 nm, preferably between 50 and150 nm, may be used as the gate insulating film 311. A single layerstructure or a lamination structure may be used. A 110 nm thick siliconoxide nitride film is used in Embodiment 1.

Thereafter, a conductive film having a thickness of 200 to 400 nm isformed and patterned to form gate electrodes 312 to 316. In the presentembodiment, the gate electrodes and wirings (hereinafter referred to asthe gate wirings) electrically connected to the gate electrodes forproviding conductive paths are formed of different materials from eachother. More specifically, the gate wirings are made of a material havinga lower resistivity than the gate electrodes. Thus, a material enablingfine processing is used for the gate electrodes, while the gate wiringsare formed of a material that can provide a smaller wiring resistancebut is not suitable for fine processing. It is of course possible toform the gate electrodes and the gate wirings with the same material.

Although the gate electrode can be made of a single-layered conductivefilm, it is preferable to form a lamination film with two, three or morelayers for the gate electrode if necessary. Any known conductivematerials can be used for the gate electrode. It should be noted,however, that it is preferable to use such a material that enables fineprocessing, and more specifically, a material that can be patterned witha line width of 2 μm or less.

Typically, it is possible to use a film made of an element selected fromtantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium(Cr), and silicon (Si), a film of nitride of the above element(typically a tantalum nitride film, tungsten nitride film, or titaniumnitride film), an alloy film of combination of the above elements(typically Mo—W alloy or Mo—Ta alloy), or a silicide film of the aboveelement (typically a tungsten silicide film or titanium silicide film).Of course, the films may be used as a single layer or a laminate layer.

In this embodiment, a laminate film of a tungsten nitride (WN) filmhaving a thickness of 30 nm and a tungsten (W) film having a thicknessof 370 nm is used. This may be formed by sputtering. When an inert gasof Xe, Ne or the like is added as a sputtering gas, film peeling due tostress can be prevented.

The gate electrodes 313 and 316 are formed at this time so as to overlapa portion of the n-type impurity regions 305 and 306, respectively,sandwiching the gate insulating film 311. This overlapping portion laterbecomes an LDD region overlapping the gate electrode.

Next, an n-type impurity element (phosphorous is used in Embodiment 1)is added in a self-aligning manner with the gate electrodes 312 to 316as masks, as shown in FIG. 5A. The addition is regulated so thatphosphorous is added to impurity regions 317 to 323 thus formed at aconcentration of 1/10 to ½ that of the impurity regions 305 and 306(typically between ¼ and ⅓). Specifically, a concentration of 1×10¹⁶ to5×10¹⁸ atoms/cm³ (typically 3×10¹⁷ to 3×10¹⁸ atoms/cm³) is preferable.

Resist masks 324 a to 324 c are formed next, with a shape covering thegate electrodes etc., as shown in FIG. 5B, and an n-type impurityelement (phosphorous is used in Embodiment 1) is added, forming impurityregions 325 to 331 containing phosphorous at high concentration. Iondoping using phosphine (PH₃) is also performed here, and is regulated sothat the phosphorous concentration of these regions is from 1×10²⁰ to1×10²¹ atoms/cm³ (typically between 2×10²⁰ and 5×10²¹ atoms/cm³).

A source region or a drain region of the n-channel TFT is formed by thisprocess, and in the switching TFT, a portion of the n-type impurityregions 320 to 322 formed by the process of FIG. 5A is remained. Theseremaining regions correspond to the LDD regions 15 a to 15 d of theswitching TFT in FIG. 2.

Next, as shown in FIG. 5C, the resist masks 324 a to 324 c are removed,and a new resist mask 332 is formed. Asp-type impurity element (boron isused in Embodiment 1) is then added, forming impurity regions 333 and334 containing boron at high concentration. Boron is added here to formimpurity regions 333 and 334 at a concentration of 3×10²⁰ to 3×10²¹atoms/cm³ (typically between 5×10²⁰ and 1×10²¹ atoms/cm³) by ion dopingusing diborane (B₂H₆).

Note that phosphorous has already been added to the impurity regions 333and 334 at a concentration of 1×10²⁰ to 1×10²¹ atoms/cm³, but boron isadded here at a concentration of at least 3 times that of thephosphorous. Therefore, the n-type impurity regions already formedcompletely invert to p-type, and function as p-type impurity regions.

Next, after removing the resist mask 332, the n-type or p-type impurityelements added to the active layer at respective concentrations areactivated. Furnace annealing, laser annealing or lamp annealing can beused as a means of activation. In Embodiment 1, heat treatment isperformed for 4 hours at 550° C. in a nitrogen atmosphere in an electricfurnace.

At this time, it is critical to eliminate oxygen from the surroundingatmosphere as much as possible. This is because when even only a smallamount of oxygen exists, an exposed surface of the gate electrode isoxidized, which results in an increased resistance and later makes itdifficult to form an ohmic contact with the gate electrode. Accordingly,the oxygen concentration in the surrounding atmosphere for theactivation process is set at 1 ppm or less, preferably at 0.1 ppm orless.

After the activation process is completed, the gate wiring 335 having athickness of 300 nm is formed. As a material for the gate wiring 335, ametal film containing aluminum (Al) or copper (Cu) as its main component(occupied 50 to 100% in the composition) can be used. The gate wiring335 is arranged, as the gate wiring 211 shown in FIG. 3A, so as toprovide electrical connection for the gate electrodes 314 and 315(corresponding to the gate electrodes 19 a and 19 b in FIG. 3A) of theswitching TFT (see FIG. 5D).

The above-described structure can allow the wiring resistance of thegate wiring to be significantly reduced, and therefore, an image displayregion (pixel portion) with a large area can be formed. Morespecifically, the pixel structure in accordance with the presentembodiment is advantageous for realizing an EL display device having adisplay screen with a diagonal size of 10 inches or larger (or 30 inchesor larger.)

A first interlayer insulating film 336 is formed next, as shown in FIG.6A. A single layer insulating film containing silicon is used as thefirst interlayer insulating film 336, while a lamination film may beused. Further, a film thickness of between 400 nm and 1.5 μm may beused. A lamination structure of an 800 nm thick silicon oxide film on a200 nm thick silicon oxide nitride film is used in Embodiment 1.

In addition, heat treatment is performed for 1 to 12 hours at 300 to450° C. in an atmosphere containing between 3 and 100% hydrogen,performing hydrogenation. This process is one of hydrogen termination ofdangling bonds in the semiconductor film by hydrogen, which is thermallyactivated. Plasma hydrogenation (using hydrogen activated by a plasma)may also be performed as another means of hydrogenation.

Note that the hydrogenation processing may also be inserted during theformation of the first interlayer insulating film 336. Namely, hydrogenprocessing may be performed as above after forming the 200 nm thicksilicon oxide nitride film, and then the remaining 800 nm thick siliconoxide film may be formed.

Next, a contact hole is formed in the first interlayer insulating film336, and source wirings 337 to 340 and drain wirings 341 to 343 areformed. In this embodiment, this electrode is made of a laminate film ofthree-layer structure in which a titanium film having a thickness of 100nm, an aluminum film containing titanium and having a thickness of 300nm, and a titanium film having a thickness of 150 nm are continuouslyformed by a sputtering method. Of course, other conductive, films may beused.

A first passivation film 344 is formed next with a thickness of 50 to500 nm (typically between 200 and 300 nm). A 300 nm thick silicon oxidenitride film is used as the first passivation film 344 in Embodiment 1.This may also be substituted by a silicon nitride film. Note that it iseffective to perform plasma processing using a gas containing hydrogensuch as H₂ or NH₃ before the formation of the silicon oxide nitridefilm. Hydrogen activated by this preprocess is supplied to the firstinterlayer insulating film 336, and the film quality of the firstpassivation film 344 is improved by performing heat treatment. At thesame time, the hydrogen added to the first interlayer insulating film336 diffuses to the lower side, and the active layers can behydrogenated effectively.

Next, as shown in FIG. 6B, a second interlayer insulating film 345 madeof organic resin is formed. As the organic resin, it is possible to usepolyimide, polyamide, acryl, BCB (benzocyclobutene) or the like.Especially, since the second interlayer insulating film 345 is primarilyused for leveling, acryl excellent in leveling properties is preferable.In this embodiment, an acrylic film is formed to a thickness sufficientto level a stepped portion formed by TFTs. It is appropriate that thethickness is made 1 to 5 μm (more preferably, 2 to 4 μm).

Thereafter, a contact hole is formed in the second interlayer insulatingfilm 345 and the first passivation film 344 to reach the drain wiring343, and then the pixel electrode 346 is formed. In the presentembodiment, an aluminum alloy film (an aluminum film containing titaniumof 1 wt %) having a thickness of 300 nm is formed as the pixel electrode346.

Next, as shown in FIG. 6C, a bank 347 made of resin material is formed.The bank 347 may be formed by patterning a 1 to 2 μm thick acrylic filmor polyimide film. As shown in FIG. 3, the bank 347 is formed as astripe shape between pixels. In Embodiment 1, the bank 347 is formedalong the source wiring 339, but it may also be formed along the gatewiring 336.

A light emitting layer 348 is next formed by the film deposition processemploying the thin film deposition apparatus explained with reference toFIG. 1. Specifically, an organic EL material that becomes the lightemitting layer 348 is dissolved in a solvent such as chloroform,dichloromethane, xylene, toluene, and tetrahydrofuran, and is thenapplied. Thereafter, heat treatment is performed to volatilize thesolvent. A film (light emitting layer) made of the organic EL materialis thus formed.

It is to be noted that only one pixel is illustrated in Embodiment 1.However, a light emitting layer luminescing red color, a light emittinglayer luminescing green color, and a light emitting layer luminescingblue color are all formed at the same time at this point. In Embodiment1, a cyano-paraphenylene vinylene is used for forming the light emittinglayer luminescing red color, a paraphenylene vinylene for the lightemitting layer luminescing green color, and a polyalkylphenylene for thelight emitting layer luminescing blue color. Each of these lightemitting layers is formed to a thickness of 50 nm. In addition, 1.2dichloromethane is used as a solvent, and then volatilized by performingheat treatment on a hot plate at 80 to 150° C. for 1 to 5 minutes.

Next, a hole injection layer 349 is formed to a thickness of 20 nm.Since the hole injection layer 349 may be provided commonly for all thepixels, it is appropriate to form the hole injection layer 349 byutilizing the spin coating method or the printing method. In Embodiment1, polythiophene (PEDOT) is applied as a solution, and heat treatment isperformed on a hot plate at 100 to 150° C. for 1 to 5 minutes to therebyvolatilize its moisture. In this case, the hole injection layer 349 canbe formed without dissolving the light emitting layer 348 becausepolyphenylene vinylene or polyalkylphenylene is insoluble.

It is to be noted that a low molecular organic EL material may be usedas the hole injection layer 349. In this case, it is appropriate to formthe hole injection layer by the evaporation method.

A two-layered structure made of the light emitting layer and the holeinjection layer is formed in Embodiment 1. However, other layers such asa hole transporting layer, an electron injection layer, and an electrontransporting layer may also be provided. Examples of various laminationstructures of such combination of layers have been reported, and anystructure may be used for the present invention.

After the formation of the light emitting layer 348 and the holeinjection layer 349, an anode 350 made of a transparent conductive filmis formed to a thickness of 120 nm. Indium oxide, which is doped with 10to 20 wt % of zinc oxide, is used for the transparent conductive film inEmbodiment 1. As the film deposition method, it is preferable to formthe anode 350 by evaporation at room temperature so that the lightemitting layer 348 and the hole injection layer 349 are notdeteriorated.

A second passivation film 351 made of a silicon oxide nitride film isformed to a thickness of 300 nm by plasma CVD after the formation of theanode 350. At this point, it is also necessary to pay attention to thefilm deposition temperature. The remote plasma CVD may be employed tolower the film deposition temperature.

An active matrix substrate having a structure as shown in FIG. 6C isthus completed. Note that after the formation of the bank 347, it iseffective to use the multi-chamber method (or the in-line method) of thethin film deposition apparatus for the process of forming the filmsuntil the formation of the passivation film 351, in succession andwithout exposure to the atmosphere.

In the active matrix substrate of the present embodiment, TFTs havingoptimal structures are arranged not only in the pixel portion but alsoin the driver circuit portion, thereby indicating an extremely highreliability and increasing its operation performance.

First, a TFT having a structure to decrease hot carrier injection so asnot to drop the operation speed thereof as much as possible is used asan n-channel TFT 205 of a CMOS circuit forming a driver circuit portion.Note that the driver circuit here includes a shift register, a buffer, alevel shifter, a sampling circuit (sample and hold circuit) and thelike. In the case where digital driving is made, a signal conversioncircuit such as a D/A converter can also be included.

In the case of Embodiment 1, as shown in FIG. 6C, an active layer of then-channel TFT 205 is composed of a source region 355, a drain region356, an LDD region 357, and a channel forming region 358. The LDD region357 overlaps the gate electrode 313 via the gate insulating film 311.This structure is identical to the structure of the current control TFT202.

Consideration not to drop the operation speed is the reason why the LDDregion is formed at only the drain region side. In this n-channel TFT205, it is not necessary to pay attention to an OFF current value verymuch, rather, it is better to give importance to an operation speed.Thus, it is desirable that the LDD region 357 is made to completelyoverlap the gate electrode to decrease a resistance component to aminimum. That is, it is preferable to remove the so-called offset.

Furthermore, deterioration of the p-channel TFT 206 in the CMOS circuitdue to the injection of hot carriers is almost negligible, and thus, itis not necessary to provide any LDD region for the p-channel TFT 206. Itis of course possible to provide the LDD region for the p-channel TFT206, similarly for the n-channel TFT 205, to exhibit countermeasureagainst the hot carriers.

Note that, among the driver circuits, the sampling circuit is somewhatunique compared to the other circuits, in which a large electric currentflows in both directions in the channel forming region. Namely, theroles of the source region and the drain region are interchanged. Inaddition, it is necessary to control the value of the off current to beas small as possible, and with that in mind, it is preferable to use aTFT having functions which are on an intermediate level between theswitching TFT and the current control TFT in the sampling circuit.

Accordingly, in the n-channel TFT for forming the sampling circuit, itis desirable to arrange the TFTs having the structure as shown in FIG.10. As illustrated in FIG. 10, portions of the LDD regions 901 a and 901b overlap the gate electrode 903 through the gate insulating film 902.The advantages obtainable by this structure have been already describedwith respect to the current control TFT 202. In the case where the TFTis used for the sampling circuit, the LDD regions are disposed tointerpose the channel forming region 904 therebetween, which isdifferent from the case of the current control TFT.

Note that, in practice, it is preferable to additionally performpackaging (sealing) after completing up through FIG. 6C by using ahighly airtight protective film which has very little gas leakage (suchas a laminate film or an ultraviolet cured resin film) or a sealingmaterial that is transmissive, so that there is no exposure to theatmosphere. By making the inside of the sealing material an inertenvironment, and by placing a drying agent (for example, barium oxide)within the sealing material, the reliability of the EL element isincreased.

Furthermore, after the airtightness is increased by the packingprocessing etc., a connector (a flexible printed circuit, FPC) forconnecting output terminals from elements or circuits formed on thesubstrate and external signal terminals, is attached, completing amanufactured product. The completed manufactured product in this stateof being able to be shipped is referred to as an EL display device (oran EL module) throughout this specification.

Here, the structure of the active matrix EL display device of thisembodiment will be described with reference to a perspective view ofFIG. 7. The active matrix EL display device of this embodiment isconstituted by a pixel portion 702, a gate side driver circuit 703, anda source side driver circuit 704 formed on a glass substrate 701. Aswitching TFT 705 of a pixel portion is an n-channel TFT, and isdisposed at an intersection point of a gate wiring 706 connected to thegate side driver circuit 703 and a source wiring 707 connected to thesource side driver circuit 704. The drain of the switching TFT 705 isconnected to the gate of a current control TFT 708.

In addition, the source of the current control TFT 708 is connected to acurrent supply line 709. A ground electric potential (earth electricpotential) is imparted to the current supply line 709 in the structuresuch as Embodiment 1. Further, an EL element 710 is connected to thedrain of the current control TFT 708. A predetermined voltage (between 3and 12 V, preferably between 3 and 5 V) is applied to the anode of theEL element 710.

Connection wirings 712 and 713 for transmitting signals to the drivercircuit portion and a connection wiring 714 connected to the currentsupply line 709 are provided in an FPC 711 as an external input/outputterminal.

FIG. 8 shows an example of the circuit structure of the EL displaydevice shown in FIG. 7. The EL display device of the present embodimentis provided with a source side driver circuit 801, a gate side drivercircuit (A) 807, a gate side driver circuit (B) 811 and a pixel portion806. Note that, throughout the present specification, the driver circuitportion is the generic name for the source side driver circuit and thegate side driver circuits.

The source side driver circuit 801 is provided with a shift register802, a level shifter 803, a buffer 804, and a sampling circuit (sampleand hold circuit) 805. The gate side driver circuit (A) 807 is providedwith a shift register 808, a level shifter 809, and a buffer 810. Thegate side driver circuit (B) 811 also has the same structure.

Here, the shift registers 802 and 808 have driving voltages of 5 to 16 V(typically 10 V) respectively, and the structure indicated by 205 inFIG. 6C is suitable for an n-channel TFT used in a CMOS circuit formingthe circuit.

Besides, for each of the level shifters 803 and 809 and the buffers 804and 810, similarly to the shift register, the CMOS circuit including then-channel TFT 205 of FIG. 6C is suitable. Note that it is effective tomake a gate wiring a multi-gate structure such as a double gatestructure or a triple gate structure in improving reliability of eachcircuit.

Besides, since the source region and the drain region are inverted andit is necessary to decrease an OFF current value, a CMOS circuitincluding the n-channel TFT 208 of FIG. 10 is suitable for the samplingcircuit 805.

The pixel portion 806 is disposed with pixels having the structure shownin FIG. 2.

The foregoing structure can be easily realized by manufacturing TFTs inaccordance with the manufacturing processes shown in FIGS. 4A to 6C. Inthis embodiment, although only the structure of the pixel portion andthe driver circuit portion is shown, if the manufacturing processes ofthis embodiment are used, it is possible to form a logical circuit otherthan the driver circuit, such as a signal dividing circuit, a D/Aconverter circuit, an operational amplifier circuit, a γ-correctioncircuit, on the same substrate, and further, it is considered that amemory portion, a microprocessor, or the like can be formed.

Furthermore, an explanation of the EL module of Embodiment 1, containingthe sealing material, is made using FIGS. 11A and 11B. Note that, whennecessary, the symbols used in FIGS. 7 and 8 are cited.

FIG. 11A is a diagram showing the top view of a state in which the stateshown in FIG. 7 is provided with a sealing structure. Indicated bydotted lines, reference numeral 702 denotes a pixel portion, 703 denotesa gate side driver circuit, and 704 denotes a source side drivercircuit. The sealing structure of the present invention is a structurein which a filling material (not shown in the figure), a cover material1101, a seal material (not shown in the figure), and a frame material1102 is provided to the state shown in FIG. 7.

Here, the cross-sectional view taken along line A-A′ of FIG. 11A isshown in FIG. 11B. It is to be noted that the same reference numeralsare used for the same components in FIGS. 11A and 11B.

As shown in FIG. 11B, the pixel portion 702 and the gate side drivercircuit 703 are formed on the substrate 701. The pixel portion 702 isformed of a plurality of pixels containing the current control TFT 202and the pixel electrode 346 which is electrically connected to thecurrent control TFT 202. Further, the gate side driver circuit 703 isformed by using a CMOS circuit that is a complementary combination ofthe n-channel TFT 205 and the p-channel TFT 206.

The pixel electrode 346 functions as the cathode of the EL element. Inaddition, the bank 347 is formed on both ends of the pixel electrode346, and the light emitting layer 348 and the hole injection layer 349are formed on the inner side of the bank 347. The anode 350 of the ELelement and the second passivation film 351 are further formed on thetop. As explained in the embodiment mode of the present invention, theEL element may of course have a reverse structure with the pixelelectrode as the anode.

In the case of Embodiment 1, the anode 350 also functions as a commonwiring to all the pixels, and is electrically connected to the FPC 711through the connection wiring 712. Furthermore, all the elementscontained in the pixel portion 702 and the gate side driver circuit 703are covered by the second passivation film 351. The second passivationfilm 351 may be omitted, but it is preferable to provide this film toshield the respective elements from the outside.

Next, a filling material 1103 is provided so as to cover the EL element.The filling material 1103 also functions as an adhesive for gluing thecover material 1101. As the filling material 1103, PVC (polyvinylchloride), epoxy resins, silicon resins, PVB (polyvinyl butyral) or EVA(ethylene vinyl acetate) can be used. It is preferable to place a dryingagent (not shown in the figure) inside the filling material 1103 becausethe absorbent effect can be maintained. At this point, the drying agentmay be an agent doped into the filling material, or an agent enclosed inthe filling material. However, a material having transmissivity is usedin the case of Embodiment 1, to thereby emit light from the side of thefilling material 1103.

Further, in Embodiment 1, a glass plate, an FRP (Fiberglass-ReinforcedPlastics) plate, PVF (polyvinyl fluoride) film, a milar film, apolyester film, or an acrylic film can be used as the cover material1101. In the case of Embodiment 1, similar to the filling material. thecover material 1101 must be made of a transmissive material. Note thatit is effective to dope a drying agent, such as barium oxide, into thefilling material 1103 in advance.

After using the filling material 1103 to glue the cover material 1101,the frame material 1102 is next attached so as to cover a side surface(the exposed surface) of the filling material 1103. The frame material1102 is glued on by the seal material (functioning as an adhesive) 1104.At this point, it is preferable to use a light cured resin as the sealmaterial 1104. However, a thermally cured resin, as long as the heatresistance of the EL layer permits, may be used. Note that it isdesirable to use, as the seal material 1104, a material through which,as much as possible, oxygen and moisture do not penetrate. In addition,a drying agent may be doped into the seal material 1104.

The EL element is thus sealed into the filling material 1103 by usingthe above procedure, to thereby completely cut off the EL element fromthe external atmosphere and to prevent the penetration of substancessuch as moisture and oxygen from the outside which stimulate thedeterioration of the EL element due to the oxidation of the EL layer.Accordingly, highly reliable EL display devices can be manufactured.

Embodiment 2

An example of simultaneously forming, in a lengthwise direction or alateral direction, three types of stripe shape light emitting layersluminescing red, green, and blue color lights was shown in Embodiment 1.An example of a stripe shape light emitting layer formed by dividing itinto a plural number of divisions in a longitudinal direction is shownin Embodiment 2.

As shown in FIG. 12A, the pixel portion 111, the source side drivercircuit 112, and the gate side driver circuit 113, all formed of TFTs,are formed on the substrate 110. The pixel portion 111 is partitionedinto matrix by a bank 1201. In the case of Embodiment 2, a plurality ofpixels 1203 are arranged within one of the squares 1202 partitioned bythe bank 1201 as shown in FIG. 12B. However, the number of pixels is notlimited.

In such a state, the film deposition process of an organic EL materialfor functioning as a light emitting layer is carried out using the thinfilm deposition apparatus of FIG. 1. Even in this case, the redapplication liquid 114 a, the green application liquid 114 b, and theblue application liquid 114 c are separately applied to by the headportion 115 at the same time.

Embodiment 2 is characterized by the fact that the application liquids114 a to 114 c can be applied separately to the above stated respectivesquares 1202. In other words, the application liquids of each color,red, green, and blue, can only be applied separately in a stripe shapein the method of FIG. 1, whereas in Embodiment 2, the colors can befreely arranged in each square. Therefore, as shown in FIG. 12A, it ispossible to arrange a color of the application liquid to be applied toan optional square in a manner so that a whole row (or column) is beingshifted.

Further, in the square 1202, the provision of one pixel is alsopossible, and in this case, the pixel structure can be adopted which isgenerally referred to as delta arrangement (a pixel structure in whichpixels corresponding to the respective colors RGB are arranged so as toalways form a triangle).

Operations imparted to the head portion 115 for the purpose ofimplementing Embodiment 2 are as follows. First, the head portion 115 ismoved to the direction indicated by the arrow a, to thereby completelysoak the inside of three squares (the respective squares correspondingto the colors red, green, and blue) with the application liquids. Aftercompleting this operation, the head portion 115 is moved to thedirection indicated by the arrow b, to thereby apply the applicationliquid to the next three squares. The application liquids are applied tothe pixel portion by repeating this operation. Thereafter, the solventis volatilized by heat treatment to form an organic EL material.

In an example described in the conventional ink-jet method, the organicEL material formed for the application of liquid drops becomes circular.Therefore, it is difficult to cover the entire long and narrow pixel.Particularly, in the case of Embodiment 1 in which the entire pixelfunctions as a light emitting region, the entire pixel needs to becovered by the organic EL material. On the other hand, Embodiment 2 hasa merit in that the squares can be completely filled with theapplication liquids by moving the head portion 115 in the directionindicated by the arrow a.

Note that the constitution of Embodiment 2 may be utilized inmanufacturing the EL display device described in Embodiment 1. The bank1201 may be formed into a matrix shape by patterning, and the operationsof the head portion 115 may be electrically controlled.

Embodiment 3

A case of employing the present invention in a passive type (simplematrix type) EL display device is explained in Embodiment 3 withreference to FIG. 13. In FIG. 13, reference numeral 1301 denotes aplastic substrate and 1302 denotes a cathode made of an aluminum alloyfilm. The cathode 1302 is formed by the evaporation method in Embodiment3. Note that although not shown in FIG. 13, a plural number of lines ofcathodes are arranged in a stripe shape, in a perpendicular direction ona defined space.

Further, a bank 1303 is formed so as to fill up the spaces between thecathodes 1302 arranged in stripes. The bank 1303 is formed along thecathodes 1302 in a perpendicular direction on the defined space.

Subsequently, light emitting layers 1304 a to 1304 c made of a highmolecular organic EL material are formed by the film deposition methodemploying the thin film deposition apparatus of FIG. 1. Of course,reference numeral 1304 a is a light emitting layer luminescing redcolor, 1304 b is a light emitting layer luminescing green color, and1304 c is a light emitting layer luminescing blue color. An organic ELmaterial similar to that of Embodiment 1 may be used in Embodiment 3.Since these light emitting layers are formed along the grooves, whichare formed by the bank 1302, these layers are arranged in a stripeshape, in a perpendicular direction on the defined space.

Thereafter, a hole injection layer 1305, common for all the pixels, isformed by the spin coating method or the printing method. The holeinjection layer may also be similar to the one of Embodiment 1. Inaddition, an anode 1306 made of a transparent conductive film is formedon the hole injection layer 1305. In Embodiment 3, a compound of indiumoxide and zinc oxide formed by the evaporation method is formed as thetransparent conductive film. Note that although not shown in FIG. 13,the parallel direction of a plural number of lines of anodes on thedefined space is the longitudinal direction, and that the anodes 1306are arranged in a stripe shape so as to intersect the cathodes 1302.Furthermore, a wiring, not shown in the drawing, is drawn to a portionwhere an FPC will be attached later so that a predetermined voltage canbe applied to the anodes 1306.

Further, after the formation of the anode 1306, a silicon nitride filmas a passivation film, not shown in the drawing, may be provided.

An EL element is thus formed on the substrate 1301. Note that since alower side electrode is a light-shielding cathode, light generated bythe light emitting layers 1304 a to 1304 c is irradiated to an uppersurface (a surface opposite the substrate 1301). However, the lower sideelectrode can be transmissive anode by reversing the structure of the ELelement. In that case, light generated by the light emitting layers 1304a to 1304 c is irradiated to a lower surface (the substrate 1301).

A plastic plate is prepared as a cover material 1307. A light-shieldingfilm or a color filter may be formed on the surface when necessary. Inthe structure of Embodiment 3, the cover material 1307 is transmissivebecause light emitted from the EL element penetrates the cover material1307 and enters the eyes of an observer. A plastic plate is used inEmbodiment 3, but a glass plate and a transmissive substrate (or atransmissive film) such as a PVF film may be used. Of course, asexplained previously, in the case of reversing the structure of the ELelement, the cover material may have light shielding characteristics.Hence, a ceramic substrate, etc. can be used.

When the cover material 1307 is thus prepared, it is then pasted on thesubstrate by a filling material 1308 that is doped with a barium oxideas a drying agent (not shown in the figure). Then, frame material 1310is attached by using a seal material 1309 made of an ultraviolet curedresin. A stainless material is used as the frame material 1310 inEmbodiment 3. Finally, an FPC 1312 is attached via a conductive paste1311, thereby completing a passive type EL display device.

Embodiment 4

When the active matrix EL display device of the present invention isseen from the direction of FIG. 11A, the rows of pixel may be formed ina lengthwise direction or lateral direction. In other words, thearrangement of the pixels becomes such as that of FIG. 14A in the caseof forming the rows of pixels in the lengthwise direction. On the otherhand, the arrangement of the pixels becomes such as that of FIG. 14B inthe case of forming the rows of pixels in the lateral direction.

In FIG. 14A, reference numeral 1401 denotes a bank formed into a stripeshape in the lengthwise direction, 1402 a denotes an EL layerluminescing a red color, and 1402 b denotes an EL layer luminescinggreen color. An EL layer luminescing blue color (not shown in thefigure) is, of course, formed next to the EL layer 1402 b luminescinggreen color. It is to be noted that in the upper direction of a sourcewiring via an insulating film, the bank 1401 is formed along the sourcewiring.

The EL layer referred to here indicates a layer made of an organic ELmaterial which contributes to the luminescing of layers such as a lightemitting layer, a charge injection layer, and a charge transportinglayer. There are cases of forming a light emitting layer as a singlelayer. However, in the case of forming a laminate layer of a holeinjection layer and a light emitting layer, for example, this laminatefilm is called an EL layer.

At this point, it is desirable that a mutual distance (D) of pixels 1403indicated by the dotted line is set to be 5 times or greater (preferably10 times or greater) than the film thickness (t) of the EL layer. Thereason for this resides in that if D<5t, the problem of cross-talk mayoccur between pixels. Note that if the distance (D) between pixels isalso too far apart, high definition images cannot be obtained.Therefore, it is preferable that the distance (D) is 5t<D<50t(preferably 10t<D<35t).

Further, in FIG. 14B, reference numeral 1404 denotes a bank formed intoa stripe shape in the lateral direction, 1405 a denotes an EL layerluminescing red color, 1405 b denotes an EL layer luminescing greencolor, and 1405 c denotes an EL layer luminescing blue color. It is tobe noted that in the upper direction of a gate wiring via an insulatingfilm, the bank 1404 is formed along the gate wiring.

Also in this case, it is appropriate that a mutual distance (D) ofpixels 1406 indicated by the dotted line is set to be 5 times or greater(preferably 10 times or greater) than the film thickness (t) of the ELlayer, and further it is preferable that the distance (D) is 5t<D<50t(preferably 10t<D<35t).

Note that the constitution of Embodiment 4 may be implemented bycombining it with any of the constitutions of Embodiments 1 to 3. Byregulating the relationship between the distance of the pixels and thefilm thickness of the EL layer as in Embodiment 4, it becomes possibleto display high definition images without cross-talk.

Embodiment 5

An example of forming all the light emitting layers, the light emittinglayer luminescing red color, the light emitting layer luminescing greencolor, and the light emitting layer luminescing blue color, by utilizingthe thin film deposition apparatus of FIG. 1 was illustrated inEmbodiment 1. However, the light emitting layer formed by using the thinfilm deposition apparatus of FIG. 1 may be a layer for at least one ofthe colors, red, green, and blue.

That is, in FIG. 1B, the nozzle 116 c (a nozzle for applying the bluelight emitting layer application liquid) is omitted. It is also possibleto apply the blue light emitting layer application liquid 114 c by otherapplication means. An example of this is shown in FIG. 15.

Shown in FIG. 15 is an example of a case in which the constitution ofEmbodiment 5 is employed in the passive type EL display deviceillustrated in Embodiment 3. The basic structures are the same as thoseof the passive type EL display device shown in FIG. 13, and thereforeonly the reference numerals of different portions are changed andexplained.

In FIG. 15, after forming the cathode 1302 on the substrate 1301, thelight emitting layer 1304 a luminescing red color and the light emittinglayer 1304 b luminescing green color are formed by utilizing the thinfilm deposition apparatus of FIG. 1. Then, a light emitting layer 1501luminescing blue color is formed thereon by the spin coating method, theprinting method, or the evaporation method. In addition, the holeinjection layer 1305 and the anode 1306 are formed.

Thereafter, the filling material 1308, the cover material 1307, the sealmaterial 1309, the frame material 1310, the conductive paste 1311, andthe FPC 1312 are formed in accordance with the explanation of Embodiment3, to thereby complete the passive type EL display device of FIG. 15.

The case of Embodiment 5 is characterized in that the light emittinglayer 1304 a luminescing red color, the light emitting layer 1304 bluminescing green color, and the light emitting layer 1501 luminescingblue color are formed by different means. Of course, the colors may befreely combined, and the light emitting layer luminescing green colormay be formed by the spin coating method, the printing method, or theevaporation method instead of the above-mentioned light emitting layerluminescing blue color.

In addition, the light emitting layer luminescing green color is formedby using the injection device of FIG. 1, and the light emitting layerluminescing red color and the light emitting layer luminescing bluecolor may be formed by the spin coating method, the printing method, orthe evaporation method. Even in this case, the colors can be freelycombined.

According to the structure of Embodiment 5, of the light emittingpixels, the red light emitting pixel, the green light emitting pixel,and the blue light emitting pixel, at least one has a structure that isa laminate layer of two different types of light emitting layers as thelight emitting layer. In this case, of the two different types of lightemitting layers, either one emits one of the colors due to the mobilityof energy. However, whichever color light will be emitted can beexamined in advance. Thus, it is appropriate to design the structure sothat the colors, red, green, and blue can be finally obtained.

As an advantageous point of structuring the light emitting layer as alaminate layer, such as the one stated above, the point that thepossibility of a short circuit caused by a pinhole becomes low can becited. Since the light emitting layer is very thin, the occurrence ofshort circuit in the cathode and anode caused by the pinhole becomes aproblem. However, the filling up of the pinhole is carried out bystructuring a laminate layer, and therefore the possibility of a shortcircuit occurring can be greatly reduced. In such a meaning, it iseffective to form the light emitting layer that is provided on the upperlayer of the laminate structure by the evaporation method where it isdifficult for pinholes to occur.

Note that in Embodiment 5, an explanation was made taking the passivetype EL display device as an example. However, the active matrix ELdisplay device may also be employed. Accordingly, the constitution ofEmbodiment 5 may be implemented by freely combining it with theconstitution of any of Embodiments 1 to 4.

Embodiment 6

An example of the head portion 115 in which 3 nozzles are attachedthereto is shown in FIG. 1. However, the head portion may be furtherattached with 3 or more nozzles in correspondence with the plurality ofrows of pixels, an example of which is shown in FIG. 16. It is to benoted that the letters R, G, and B correspond to red, green, and bluerespectively.

Shown in FIG. 16 is an example of collectively applying an organic ELmaterial (strictly application liquid) to all the rows of pixels formedin the pixel portion. That is, the number of nozzles attached to a headportion 1601 is the same as the number of rows of pixels. Byconstructing such a structure, it becomes possible to apply theapplication liquid to the entire rows of pixels in one scan, therebymaking a rapid increase in throughput.

Further, the pixel portion is divided into a plurality of zones. A headportion provided with the same number of nozzles as the number of rowsof pixels contained in each zone may be employed. In other words, if thepixel portion is divided into n number of zones, then the organic ELmaterial (strictly application liquid) can be applied to all the rows ofpixels by scanning n number of times.

Since there are actually cases where the size of the pixels are small,several tens of μm, then the width of a pixel row is also about severaltens of μm. In such a case, the arrangement of the nozzles needs to becontrived because it is difficult to arrange the nozzles in onehorizontal row.

Shown in FIG. 17 is an example in which the attachment positions of thenozzles to the head portion are altered. In FIG. 17A, nozzles 52 a to 52c are formed on the head portion 51 while shifting their attachmentpositions diagonally. Note that reference numeral 52 a denotes a nozzlefor applying red light emitting layer application liquid, 52 b denotes anozzle for applying green light emitting layer application liquid, and52 c denotes a nozzle for applying blue light emitting layer applicationliquid. Further, each of the arrows corresponds to a pixel row.

The nozzles 52 a to 52 c are then considered as one unit as indicated byreference numeral 53. Thus, the head portion is provided with one toseveral numbers of units. If there is one unit 53, then the organic ELmaterial can be applied to 3 rows of pixels at the same time. This meansthat if there are n numbers of units, then the organic EL material canbe applied to n numbers of 3 rows of pixels at the same time.

By forming such a structure, the degree of freedom in the arrangementspace of nozzles is raised, making it possible to implement the presentinvention in a highly detailed pixel portion without much difficulty. Inaddition, the head portion 51 of FIG. 17A may be used in collectivelyprocessing (applying the application liquid thereto) all the rows ofpixels in the pixel portion, or may be used in the case where the pixelportion is divided into a plurality of zones and the process of the rowsof pixels is divided into several times.

A head portion 54 shown in FIG. 17B is a modified version of FIG. 17A.It is an example of a case of increasing the number of nozzles containedin one unit 55. In other words, 2 nozzles 56 a for applying the redlight emitting layer application liquid, 2 nozzles 56 b for applying thegreen light emitting layer application liquid, and 2 nozzles 56 c forapplying the blue light emitting layer application liquid are containedin the unit 55. Hence, a total of 6 rows of pixels can be applied withthe organic EL material at the same time by one unit 55.

One to a plural number of the above-mentioned unit 55 can be provided inEmbodiment 6. If there is only one unit 55, then the organic EL materialcan be applied to 6 rows of pixels at the same time. If there are nnumbers of unit 55, then the organic EL material can be applied to nnumbers of 6 rows of pixels at the same time. Of course, the number ofnozzles provided in the unit 55 is not necessarily limited to 6, but anadditional number of nozzles may be provided.

In the case of such structure, similarly to the case of FIG. 17A, allthe rows of pixels in the pixel portion can be collectively processed,or it is possible to divide the process into several times when thepixel portion is divided into a plurality of zones.

In addition, a head portion such as a head portion 57 shown in FIG. 17Ccan be used. In the head portion 57, a space for 3 rows of pixels isopened for provision of a nozzle 58 a for applying the red lightemitting layer application liquid, a nozzle 58 b for applying the greenlight emitting layer application liquid, and a nozzle 58 c for applyingthe blue light emitting layer application liquid.

First, the head portion 57 is scanned once to apply the organic ELmaterial to the rows of pixels. Next, the head portion 57 is shifted by3 rows of pixel to the right and scanned again. Then the head portion isfurther shifted by 3 rows of pixels to the right and scanned again.Scanning is thus performed 3 times, whereby the organic EL material canbe applied to the stripes lined in the order of red, green, and blue.

Also in the case of such a structure, similarly to the case of FIG. 17A,all the rows of pixels in the pixel portion can be collectivelyprocessed, or it is possible to divide the process into several timeswhen the pixel portion is divided into a plurality of zones.

Thus, in the thin film deposition apparatus of FIG. 1, by contriving theposition of nozzles to be attached to the head portion, the presentinvention may also be implemented in a highly detailed pixel portionhaving very narrow pixel pitches (the distance between pixels).Furthermore, the throughput of the manufacturing process can beincreased.

Note that the constitution of Embodiment 6 may be implemented by freelycombining it with the constitution of any of Embodiments 1 to 5.

Embodiment 7

When the present invention is implemented to manufacture an activematrix EL display device, it is effective to use a silicon substrate(silicon wafer) as a substrate. In the case of using the siliconsubstrate as the substrate, a manufacturing technique of MOSFET utilizedin the conventional IC, LSI or the like can be employed to manufacture aswitching element and a current control element to be formed in thepixel portion, or a driver element to be formed in the driver circuitportion.

The MOSFET can form circuits having extremely small variations as in itsachievements in the IC and the LSI. Particularly, it is effective for ananalog driver of the active matrix EL display device for performinggradation display by an electric current value.

It is to be noted that the silicon substrate is not transmissive, andtherefore the structure needs to be constructed so that light from thelight emitting layer is irradiated to a side opposite the substrate. Thestructure of the EL display device of Embodiment 7 is similar to that ofFIG. 11. However, the point of difference is that the MOSFET is used forforming a pixel portion 702 and a driver circuit portion 703 instead ofa TFT.

Embodiment 8

An EL display device formed by implementing the present invention hassuperior visibility in bright locations in comparison to a liquidcrystal display device because it is a self-emissive type device, andmoreover its field of vision is wide. Accordingly, it can be used as adisplay portion for various electronic devices. For example, it isappropriate to use the EL display device of the present invention as adisplay portion of an EL display (a display incorporating the EL displaydevice in its casing) having a diagonal equal to 30 inches or greater(typically equal to 40 inches or greater) for appreciation of TVbroadcasts by large screen.

Note that all displays exhibiting (displaying) information such as apersonal computer display, a TV broadcast reception display, or anadvertisement display are included as the EL display. Further, the ELdisplay device of the present invention can be used as a display portionof the other various electronic devices.

The following can be given as examples of such electronic devices: avideo camera; a digital camera; a goggle type display (head mounteddisplay); a car navigation system; an audio reproducing device (such asa car audio system, an audio compo system): a notebook personalcomputer; a game equipment; a portable information terminal (such as amobile computer, a mobile telephone, a mobile game equipment or anelectronic book); and an image playback device provided with a recordingmedium (specifically, a device which performs playback of a recordingmedium and is provided with a display which can display those images,such as a digital video disk (DVD)). In particular, because portableinformation terminals are often viewed from a diagonal direction, thewideness of the field of vision is regarded as very important. Thus, itis preferable that the EL display device is employed. Examples of theseelectronic devices are shown in FIGS. 18A to 19B.

FIG. 18A is an EL display, containing a casing 2001, a support stand2002, and a display portion 2003. The present invention can be used inthe display portion 2003. Since the EL display is a self-emissive typedevice without the need of a backlight, its display portion can be madethinner than a liquid crystal display device.

FIG. 18B is a video camera, containing a main body 2101, a displayportion 2102, an audio input portion 2103, operation switches 2104, abattery 2105, and an image receiving portion 2106. The EL display deviceof the present invention can be used in the display portion 2102.

FIG. 18C is a portion of a head fitting type EL display (right side),containing a main body 2201, a signal cable 2202, a head fixing band2203, a display portion 2204, an optical system 2205, and an EL displaydevice 2206. The present invention can be used in the EL display device2206.

FIG. 18D is an image playback device (specifically, a DVD playbackdevice) provided with a recording medium, containing a main body 2301, arecording medium (such as a DVD) 2302, operation switches 2303, adisplay portion (a) 2304, and a display portion (b) 2305. The displayportion (a) is mainly used for displaying image information, and theimage portion (b) is mainly used for displaying character information,and the EL display device of the present invention can be used in theimage portion (a) and in the image portion (b). Note that domestic gameequipment is included as the image playback device provided with arecording medium.

FIG. 18E is a mobile computer, containing a main body 2401, a cameraportion 2402, an image receiving portion 2403, operation switches 2404,and a display portion 2405. The EL display device of the presentinvention can be used in the display portion 2405.

FIG. 18F is a personal computer, containing a main body 2501, a casing2502, a display portion 2503, and a keyboard 2504. The EL display deviceof the present invention can be used in the display portion 2503.

Note that in the future if the emission luminance of EL materialsbecomes higher, the projection of light including outputted images canbe enlarged by lenses or the like. Then it will become possible to usethe EL display device of the present invention in a front type or a reartype projector.

The above electronic devices are becoming more often used to displayinformation provided through an electronic transmission circuit such asthe Internet or CATV (cable television), and in particular,opportunities for displaying animation information are increasing. Theresponse speed of EL materials is extremely high, and therefore the ELdisplay device is favorable for performing animation display. However,the contours between pixels become hazy, whereby the entire animationalso becomes hazy. Accordingly, it is extremely effective to use the ELdisplay device of the present invention in the display portion ofelectronic equipment because of its capability of clarifying thecontours between pixels.

The emitting portion of the EL display device consumes power, andtherefore it is preferable to display information so as to have theemitting portion become as small as possible. Therefore, when using theEL display device in a display portion which mainly displays characterinformation, such as a portable information terminal, in particular, aportable telephone and an audio reproducing device, it is preferable todrive it by setting non-emitting portions as background and formingcharacter information in emitting portions.

FIG. 19A is a portable telephone, containing a main body 2601, an audiooutput portion 2602, an audio input portion 2603, a display portion2604, operation switches 2605, and an antenna 2606. The EL displaydevice of the present invention can be used in the display portion 2604.Note that by displaying white characters in a black background in thedisplay portion 2604, the power consumption of the portable telephonecan be reduced.

FIG. 19B is an audio reproducing device, specifically a car audiosystem, containing a main body 2701, a display portion 2702, andoperation switches 2703 and 2704. The EL display device of the presentinvention can be used in the display portion 2702. Furthermore, an audioreproducing device for a car is shown in Embodiment 8, but it may alsobe used for a mobile type and a domestic type of audio reproducingdevice. Note that by displaying white characters in a black backgroundin the display portion 2704, the power consumption can be reduced. Thisis particularly effective in a mobile type audio reproducing device.

The range of applications of the present invention is thus extremelywide, and it is possible to apply the present invention to electronicdevices in all fields. Furthermore, any constitution of the EL displaydevice shown in Embodiments 1 to 7 may be employed in the electronicdevices of Embodiment 8.

Embodiment 9

In Embodiment 9, a case in which a method of enclosing an EL elementdifferent from that of the cross-sectional structure of the EL displaydevice shown in FIG. 11 in Embodiment 1 will be explained with referenceto FIG. 20; Note that processes up through the formation of the activematrix substrate of Embodiment 9 is similar to those of Embodiment 1,and their explanation is therefore omitted.

The active matrix substrate formed in accordance with Embodiment 1 isprovided with a seal material 2801, and a cover material 2802 is gluedthereto. Resins that have adhesive properties such as an ultravioletcured resin may be used as the seal material 2801. In particular, it ispreferable to use resins through which, as much as is possible, moistureis not permeated and as little as possible of gas leakage. In addition,materials that can extract light emitted from an EL element formed insubstrates such as a glass substrate, a plastic substrate, or a ceramicsubstrate provided with a window member having light transparencycharacteristics may be used as the cover material 2802.

In Embodiment 9, the seal material 2801 made of an ultraviolet curedresin is formed so as to encircle the pixel portion 702 and the drivercircuit portion 703 by using a dispenser, and then the cover material2802 made of plastic is adhered thereto. Next, the seal material 2801 iscured by irradiating ultraviolet rays, thereby bonding the covermaterial 2802 to the active matrix substrate.

Note that color filters 2803 and 2804 made of resin are provided on thecover material 2802 made of plastic before it is adhered to thesubstrate. The color filters 2803 and 2804 are provided above each ofthe pixels to improve the color purity of the light emitted from the ELelement. It does not matter if the color filters are not provided.

A closed space 2805 formed by the active matrix substrate, the covermaterial 2802, and the seal material 2801 is filled with inert gas(specifically nitric gas or noble (rare) gas). In order to do this, itis appropriate to perform the process of bonding the active matrixsubstrate and the cover material in inert gas. Furthermore, it iseffective to provide a drying agent such as barium oxide inside theclosed space 2805. It is also possible to additionally dope a dryingagent in the seal material 2801, the cover material 2802, or the colorfilters 2803 and 2804.

Note that it is possible to implement the constitution of Embodiment 9by freely combining it with the constitution of any of Embodiments 1 to7. The EL display device obtained by implementing Embodiment 9 may beemployed in any of the electronic equipment of Embodiment 8.

Embodiment 10

A case of manufacturing a plural number of the EL display devices of thepresent invention on a large substrate is explained in Embodiment 10.The explanation is made using the top views shown in FIGS. 21A and 21Band FIGS. 22A and 22B. Note that each of the top views has bothcross-sectional views taken along line A-A′ and line B-B′.

FIG. 21A shows the state of an active matrix substrate, which is formedin accordance with any one of the Embodiments 1 to 7, with sealmaterials formed thereon. Reference numeral 2901 denotes the activematrix substrate having seal materials 2902 provided in several places.

A pixel portion and a driver circuit portion of the EL display deviceare contained inside the respective regions surrounded by the sealmaterials 2902. That is, a plurality of active matrix portions 2903,each made up of a combination of the pixel portion and the drivercircuit portion, are formed on one large substrate, the active matrixsubstrate 2901. Typically, a substrate having an area of 620 mm×720 mmor 400 mm×500 mm is used as a large substrate. Of course, substrateshaving other areas may be used.

FIG. 21B shows a state in which a cover material 2904 is adhered to theactive matrix substrate 2901. A substrate having an area that is thesame as that of the active matrix substrate 2901 may be used for thecover material 2904. Accordingly, in the state shown in FIG. 21B, acommon cover material can be used for all the active matrix portions.

Next, a process of cutting the active matrix substrate in the stateshown in FIG. 21B is explained with reference to FIGS. 22A and 22B.

In Embodiment 10, the cutting of the active matrix substrate 2901 andthe cover material 2904 is conducted by using a scriber. The scriber isa device for cutting a substrate by first forming narrow grooves (scribegrooves) in the substrate and then applying impact to the scribe groovesto generate fissures along the scribe grooves, thereby cutting thesubstrate.

It is to be noted that as another device for cutting a substrate, adicer is known. The dicer is a device in which a hard cutter (alsoreferred to as a dicing saw) is rotated at a very high speed and appliedto the substrate

It is to be noted that as another device for cutting a substrate, thedicer is known. The dicer is a device in which a hard cutter (alsoreferred to as a dicing saw), rotating at a very high speed, is appliedto the substrate to cut the substrate. However, when using the dicer,the dicing saw is sprayed with water in order to prevent the heatgeneration and the scattering of polish dust. Therefore, whenmanufacturing the EL display device, it is desirable to employ thescriber, in which there is no need to use water.

The order of forming scribe grooves in the active matrix substrate 2901and the cover material 2904 is as follows. First, a scribe groove 2905 ais formed in the direction indicated by the arrow (a), then a scribegroove 2905 b is formed in the direction indicated by the arrow (b), andfinally, a scribe groove 2905 c is formed in the direction indicated bythe arrow (c).

When the scribe grooves are formed, impact is applied to the scribegrooves with a bar, which is made of an elastic material such as siliconresin, to generate fissures and then the active matrix substrate 2901and the cover material 2904 are cut. FIG. 22B is a diagram showing thestate after cutting the active matrix substrate 2901 and the covermaterial 2904. In this drawing, a set, which is composed of an activematrix substrate 2901′ and a cover material 2904′, contains one activematrix portion.

Further, the cover material 2904′ is cut smaller than the active matrixsubstrate 2901 at this time. The purpose of doing this is to attachingan FPC (Flexible Print Circuit) to a region, indicated by the referencenumeral 2906. The EL display device is completed at the point the FPC isattached.

A plurality of EL display devices can thus be manufactured from onesubstrate by implementing Embodiment 10. For instance, six 13 to 14 inchdiagonal EL display devices or four 15 to 17 inch diagonal EL displaydevices may be manufactured from a 620 mm×720 mm substrate. Therefore, alarge increase in throughput and a reduction in manufacturing cost canbe achieved.

Embodiment 11

A structure in which the structure of the EL element 203 in the pixelportion shown in Embodiment 1 has been reversed is explained inEmbodiment 11 with reference to FIG. 23. Note that the differencebetween the structure of Embodiment 11 and the structure of FIG. 2 isonly in the part of the EL element and the current control TFT, andtherefore an explanation of the other portions is omitted.

In FIG. 23, a current control TFT 61 is formed by using a p-channel TFTwhose structure is identical with that of the p-channel TFT 206 formedin accordance with the manufacturing process of Embodiment 1. Therefore,a detailed explanation of the current control TFT 61 is omitted.

In Embodiment 11, a transparent conductive film is used as a pixelelectrode (anode) 62. Specifically, a conductive film made of a compoundof indium oxide and zinc oxide is used. Of course, a conductive filmmade of a compound of indium oxide and tin oxide may also be used.

After banks 63 a and 63 b made of an insulating film are formed, solventapplication is performed to thereby form a light emitting layer 64 madeof polyvinyl carbazole. An electron injection layer 65 made of potassiumacetyl acetonate is formed on the light emitting layer 64, and then acathode 66 made of aluminum alloy is formed thereon. In this case, thecathode 66 also functions as a passivation film. An El element 67 isthus formed.

In the case of Embodiment 11, as indicated by the arrow, light generatedfrom the light emitting layer 64 is irradiated toward the substrate witha TFT formed thereon. When forming a structure such as Embodiment 11, itis preferable to form the current control TFT 61 with a p-channel TFT.However, the current control TFT may also be formed with an n-channelTFT.

Note that it is possible to implement the constitution of Embodiment 11by freely combining it with the constitution of any of Embodiments 1 to7, 9, and 10. In addition, it is effective to employ the EL displaydevice having the structure of Embodiment 11 as the display portion ofthe electronic equipment of Embodiment 8.

Embodiment 12

In Embodiment 12, an example of a case in which a pixel constitutionshown in FIG. 24 differs from that of the circuit diagram(constitution)-shown in FIG. 3B. Note that in Embodiment 12, referencenumeral 71 denotes source wiring of a switching TFT 72, 73 denotes agate wiring of the switching TFT 72, 74 denotes a current control TFT,75 denotes a capacitor, 76 and 78 denote electric current supply lines,and 77 denotes an EL element.

It is to be noted that the capacitor 75 employs a gate capacitance (agate capacitance formed between a gate electrode and an LDD region) ofthe current control TFT 74 that is formed of an n-channel TFT.Substantially, the capacitor 75 is not provided, and therefore it isindicated by a dotted line. Of course, a capacitor may be formed in adifferent structure.

FIG. 24A is an example of a case in which the electric current supplyline 76 is common between two pixels. Namely, this is characterized inthat the two pixels are formed having linear symmetry around theelectric current supply line 76. In this case, the number of theelectric current supply lines can be reduced, and therefore the pixelportion can be made with higher definition.

Further, FIG. 24B is an example of a case in which the electric currentsupply line 78 is formed parallel to the gate wiring 73. Note that inFIG. 24B, the structure is formed such that the electric current supplyline 78 and the gate wiring 73 do not overlap, but provided that bothare wirings formed on different layers, then they can be formed tooverlap through an insulating film. In this case, the exclusive surfacearea can be shared by the electric current supply line 78 and the gatewiring 73, and the pixel portion can be made with higher definition.

Furthermore, FIG. 24C is characterized in that the electric currentsupply line 78 and the gate wiring 73 are formed in parallel, similar tothe structure of FIG. 24B, and additionally, in that the two pixels areformed so as to have linear symmetry around the electric current supplyline 78. In addition, it is effective to form the electric currentsupply line 78 so as to overlap with one of the gate wirings 73. In thiscase, the number of electric current supply lines can be reduced, andtherefore the pixel portion can be made with higher definition.

Note that it is possible to implement the constitution of Embodiment 12by freely combining it with the constitution of any of Embodiments 1 to7 and 9 to 11. In addition, it is effective to employ the EL displaydevice having the pixel structure of Embodiment 12 as the displayportion of the electronic equipment of Embodiment 8.

Embodiment 13

In Embodiment 11, a p-channel TFT is used as the current control TFT 61.An example of using a p-channel TFT having an LDD region is shown inEmbodiment 13. A structure of the current control TFT of Embodiment 13is shown in FIG. 25A.

In FIG. 25A, reference numeral 81 denotes a source region, 82 denotes adrain region. 83 denotes an LDD region, 84 denotes a channel formingregion, 85 denotes a gate insulating film, 86 denotes a gate electrode,87 denotes a first interlayer insulating film, 88 denotes a sourcewiring, 89 denotes a drain wiring, and 90 denotes a first passivationfilm.

In the case of forming the structure of Embodiment 13, it is in a statewhere the gate electrode 86 overlaps the LDD region 83 through the gateinsulating film 85, and a gate capacitance is formed therebetween.Embodiment 13 is characterized in that the gate capacitance is used as acapacitor for maintaining a gate voltage of the current control TFT.

An example of a pixel constitution according to Embodiment 13 is shownin FIG. 25B. In FIG. 25B, reference numeral 91 denotes a source wiring,92 denotes a gate wiring, 93 denotes a switching T° F., 94-denotes acurrent control TFT, 95 denotes a capacitor formed of a gate capacitanceof the current control TFT, 96 denotes an EL element, and 97 denotes anelectric current supply line.

Note that the structure of FIG. 25A is a structure in which thestructure of the current control TFT and the direction of the EL elementin FIG. 24A are alternated. That is, it is possible to form the pixelconstitution to have the circuit configurations as shown in FIGS. 24Band 24C.

In the case of forming the current control TFT of Embodiment 13, aprocess of forming the LDD region of the p-channel TFT is required.However, a patterning process for forming the LDD region 83 and a dopingprocess of a p-type impurity element may be added to the manufacturingprocess of Embodiment 1. When adding these processes, it is appropriateto set the concentration of the p-type impurity element contained in theLDD region 83 to between 1×10¹⁵ and 1×10¹⁸ atoms/cm³ (typically between5×10¹⁶ and 5×10¹⁷ atoms/cm³).

Note that it is possible to implement the constitution of Embodiment 13by freely combining it with the constitution of any of Embodiments 1 to7 and 9 to 12. In addition, it is effective to employ the EL displaydevice having the pixel structure of Embodiment 13 as the displayportion of the electronic equipment of Embodiment 8.

Implementing the present invention makes it undoubtedly possible toperform film deposition of an organic EL material without the aviationcurve problem, which occurs in the ink-jet method. Namely, since a highmolecular organic EL material can be film deposited accurately andwithout any problem of positional shift, the production yield of an ELdisplay device using a high molecular organic EL material can beincreased. Further, the organic EL material is applied not in the formof a “dot” as in the ink-jet method, but in the form of a “line”, andtherefore, a high throughput is attained.

1-46. (canceled)
 47. A method of manufacturing a light emitting devicecomprising: forming a plurality of stripe shape banks over a substrateto form a plurality of grooves; and continuously discharging a liquidfrom a nozzle into one of the plurality of grooves while relativelymoving the nozzle along the one of the plurality of grooves, the liquidincluding an organic light emitting material.
 48. The method accordingto claim 47 wherein the substrate is moved while the nozzle is fixed inthe step of continuously discharging the liquid.
 49. The methodaccording to claim 47 further comprising a step of heating the liquid toform a layer including the organic light emitting material.
 50. Themethod according to claim 47 wherein the liquid is discharged b usingpressurized gas.
 51. The method according to claim 47 wherein theorganic light emitting material is a polymer.
 52. A method ofmanufacturing a light emitting device comprising: forming a plurality ofstripe shape banks over a substrate to form a plurality of groovesincluding a first groove and a second groove; continuously discharging afirst liquid from a first nozzle into the first groove and a secondliquid from a second nozzle into the second groove while relativelymoving the first nozzle and the second nozzle along the first groove andthe second groove, the first liquid including a first organic lightemitting material and the second liquid including a second organic lightemitting material.
 53. The method according to claim 52 wherein thesubstrate is moved while the first nozzle and the second nozzle arefixed in the step of continuously discharging the first liquid and thesecond liquid.
 54. The method according to claim 52 further comprising astep of heating the first liquid and the second liquid to form a firstlayer including the first organic light emitting material and a secondlayer including the second organic light emitting material.
 55. Themethod according to claim 52 wherein the first groove is locatedadjacent to the second groove.
 56. The method according to claim 52wherein the first organic light emitting material emits a differentcolor light from the second organic light emitting material.
 57. Themethod according to claim 52 further comprising a step of forming alayer including a third organic light emitting material over the firstgroove and the second groove.
 58. The method according to claim 52wherein the first organic light emitting material is a polymer.
 59. Amethod of manufacturing a light emitting device comprising: forming aplurality of stripe shape banks over a substrate to form a plurality ofgrooves wherein a plurality of electrodes are arranged along theplurality of grooves; and continuously discharging a liquid from anozzle into one of the plurality of grooves while relatively moving thenozzle along the one of the plurality of grooves, the liquid includingan organic light emitting material.
 60. The method according to claim 59wherein the substrate is moved while the nozzle is fixed in the step ofcontinuously discharging the liquid.
 61. The method according to claim59 further comprising a step of heating the liquid to form a layerincluding the organic light emitting material.
 62. The method accordingto claim 59 wherein the liquid is discharged b using pressurized gas.63. The method according to claim 59 wherein the organic light emittingmaterial is a polymer.
 64. A method of manufacturing a light emittingdevice comprising: forming a plurality of stripe shape banks over asubstrate to form a plurality of grooves including a first groove and asecond groove wherein a plurality of electrodes are arranged along theplurality of grooves; continuously discharging a first liquid from afirst nozzle into the first groove and a second liquid from a secondnozzle into the second groove while relatively moving the first nozzleand the second nozzle along the first groove and the second groove, thefirst liquid including a first organic light emitting material and thesecond liquid including a second organic light emitting material. 65.The method according to claim 64 wherein the substrate is moved whilethe first nozzle and the second nozzle are fixed in the step ofcontinuously discharging the first liquid and the second liquid.
 66. Themethod according to claim 64 further comprising a step of heating thefirst liquid and the second liquid to form a first layer including thefirst organic light emitting material and a second layer including thesecond organic light emitting material.
 67. The method according toclaim 64 wherein the first groove is located adjacent to the secondgroove.
 68. The method according to claim 64 wherein the first organiclight emitting material emits a different color light from the secondorganic light emitting material.
 69. The method according to claim 64further comprising a step of forming a layer including a third organiclight emitting material over the first groove and the second groove.